pg赏金女王模拟器在线试玩

Research and development capability
The company has set up a special research and development laboratory, with perfect polishing material preparation, testing, verification, modification and other experimental equipment. It mainly has optical 3D surface profiler, nitrogen adsorption surface area meter, Malvern laser particle size meter 2000, Malvern laser particle size meter 3000, rotary viscometer, constant temperature drying oven, program Muffle furnace, planetary ball mill, plane grinder and other basic equipment, and also has the chemical analysis of iron, praseodymium, cerium, SO, REO, F, etc. Rapid detection ability of Cl and other elements. Lanzhou University has scientific research and testing channels, With the help of Lanzhou University and Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscope surface analysis, plasma photoelectric direct reading spectrometer, atomic absorption spectrometer, nuclear magnetic resonance and energy spectrometer and other large equipment, The indicators involved can be detected and analyzed. The company has 13 experienced full-time R & D personnel, including 1 for more than 20 years, 3 for more than 10 years, and 4 for more than 5 years. At the same time, it maintains good cooperative relations with some professors of Lanzhou University, including 2 cooperative professors and 1 researcher. Mainly for rare earth polishing materials, organic complexes, slurry preparation and powder modification cooperation research and development. In cooperation with the reviewer team of international journals such as ASME Journal of Tribology, Jiangnan University, the third generation of wide band gap semiconductor polishing materials was developed.
Polishing and grinding
By constructing stable strong oxidation solution system; The abrasive particles with aggregate state, pore structure and crystal state meeting the requirements were prepared. A silicon carbide single crystal substrate CMP polishing liquid was prepared by preparing a slurry with high dispersion, wettability, leveling property and balanced conveying property.
C sapphire material
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This product is suitable for the rapid polishing of C-direction sapphire material, which can meet the polishing requirements of double-sided and single-sided processes, and has good versatility. After the product volume ratio of 1:13 dilution, the single-side hourly removal rate can reach 14μm, the surface roughness Sa after polishing is less than 0.4nm, and the removal rate of more than 7μm per hour can be maintained after 24 hours of recycling. This product has stable suspension performance, long time not congealling, good fluidity, easy to clean during use.

Filter polish
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This product is suitable for precision polishing of blue glass filter, and can be used for rapid polishing of soft materials with high abrasion degree 200-300. Compared with imported products, the polishing rate is increased by 15%, the suspension performance is stable, and the surface accuracy is high. It can quickly improve the quality of the glass surface at low pressure, easy to clean after polishing, and no residue on the glass surface.

Copper clad plate polishing liquid
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The polishing speed is 13 times that of the market products, the surface roughness Sa after polishing can reach below 2nm, the line surface has no deep scratch, the line edge does not collapse, and the surface has no residue after polishing.

Optical prism polishing fluid
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This product is suitable for the precision polishing of adhesive optical prisms, which can achieve heterogeneous polishing at the same speed, and the glue seam depth is less than 10 microns after polishing. While maintaining sufficient polishing rate, it can maintain good surface accuracy and seam depth, which is significantly better than the seam depth of less than 30 microns required by the industry.

Product advantage
1. One-step polishing makes the surface roughness Sa less than 0.5nm. 2. Silicon surface polishing rate MRR is greater than 3 microns/hour, increased by 15%. 3. Carbon surface polishing rate MRR greater than 7 microns/hour, increased by 7%. 4. Technology and raw materials are all domestic, stable supply.
Industry mainstream
1. Two-step polishing with alumina and silica polishing paste. 2. Silicon surface polishing rate MRR is greater than 2.6 microns/hour. 3. Carbon surface polishing rate MRR greater than 6.5 microns/hour.
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